? semiconductor components industries, llc, 2005 september, 2005 ? rev. 1 1 publication order number: bc847bpdxv6t1/d bc847bpdxv6t1, bc847bpdxv6t5 dual general purpose transistor npn/pnp dual (complementary) this transistor is designed for general purpose amplifier applications. it is housed in the sot?563 which is designed for low power surface mount applications. ? lead?free solder plating maximum ratings ? npn rating symbol value unit collector ?emitter voltage v ceo 45 v collector ?base voltage v cbo 50 v emitter ?base voltage v ebo 6.0 v collector current ? continuous i c 100 madc maximum ratings ? pnp rating symbol value unit collector ?emitter voltage v ceo ?45 v collector ?base voltage v cbo ?50 v emitter ?base voltage v ebo ?5.0 v collector current ? continuous i c ?100 madc maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance ? junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance ? junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad sot?563 case 463a plastic 1 2 3 6 5 4 q 1 (1) (2) (3) (4) (5) (6) q 2 ordering information http://onsemi.com marking diagram device package shipping ? bc847bpdxv6t1 sot?563 4 mm pitch 4000/tape & reel bc847bpdxv6t1g sot?563 (pb?free) 2 mm pitch 4000/tape & reel bc847bpdx6t1 4f = specific device code m = month code = pb?free package (note: microdot may be in either location) 4f m 1 bc847bpdxv6t5 sot?563 4 mm pitch 8000/tape & reel bc847bpdxv6t5g sot?563 (pb?free) 2 mm pitch 8000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
bc847bpdxv6t1, bc847bpdxv6t5 http://onsemi.com 2 electrical characteristics (npn) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma) v (br)ceo 45 ? ? v collector ?emitter breakdown voltage (i c = 10 a, v eb = 0) v (br)ces 50 ? ? v collector ?base breakdown voltage (i c = 10 a) v (br)cbo 50 ? ? v emitter ?base breakdown voltage (i e = 1.0 a) v (br)ebo 6.0 ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) h fe ? 200 150 290 ? 475 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ?emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small?signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc847bpdxv6t1, bc847bpdxv6t5 http://onsemi.com 3 electrical characteristics (pnp) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) v (br)ceo ?45 ? ? v collector ?emitter breakdown voltage (i c = ?10 a, v eb = 0) v (br)ces ?50 ? ? v collector ?base breakdown voltage (i c = ?10 a) v (br)cbo ?50 ? ? v emitter ?base breakdown voltage (i e = ?1.0 a) v (br)ebo ?5.0 ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain (i c = ?10 a, v ce = ?5.0 v) (i c = ?2.0 ma, v ce = ?5.0 v) h fe ? 200 150 290 ? 475 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small?signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc847bpdxv6t1, bc847bpdxv6t5 http://onsemi.com 4 typical npn characteristics figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector?emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c ?55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current?gain ? bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc847bpdxv6t1, bc847bpdxv6t5 http://onsemi.com 5 typical pnp characteristics figure 7. normalized dc current gain i c , collector current (madc) 2.0 figure 8. ?saturation? and ?on? voltages i c , collector current (madc) ?0.2 0.2 figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficient i c , collector current (ma) ?0.6 ?0.7 ?0.8 ?0.9 ?1.0 ?0.5 0 ?0.2 ?0.4 ?0.1 ?0.3 1.6 1.2 2.0 2.8 2.4 ?1.2 ?1.6 ?2.0 ?0.02 ?1.0 ?10 0 ?20 ?0.1 ?0.4 ?0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector?emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 ?0.2 ?10 ?100 ?1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = ?10 v v ce = ?10 v t a = 25 c ?55 c to +125 c i c = ?100 ma i c = ?20 ma ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 i c = ?200 ma i c = ?50 ma i c = ?10 ma figure 11. capacitances v r , reverse voltage (volts) 10 figure 12. current?gain ? bandwidth product i c , collector current (madc) ?0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 ?0.5 c, capacitance (pf) f, current?gain ? bandwidth product (mhz) t t a = 25 c c ob c ib ?0.6 ?1.0 ?2.0 ?4.0 ?6.0 ?10 ?20 ?30 ?40 150 ?1.0 ?2.0 ?3.0 ?5.0 ?10 ?20 ?30 ?50 v ce = ?10 v t a = 25 c t a = 25 c 1.0
bc847bpdxv6t1, bc847bpdxv6t5 http://onsemi.com 6 1.35 the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 150 milliwatts. information for using the sot?563 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with th e correct pad geometry, the packages will self align whe n subjected to a solder reflow process. sot?563 power dissipation p d = t j(max) ? t a r ja p d = 150 c ? 25 c 833 c/w = 150 milliwatts the power dissipation of the sot?563 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipa- tion. power dissipation for a surface mount device is deter- mined by t j(max) , the maximum rated junction temperature of the die, r ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot?563 package, p d can be calculated as follows: the 833 c/w for the sot?563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milli- watts. there are other alternatives to achieving higher power dissipation from the sot?563 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than th e rated temperature of the device. when the entire device i s heated to a high temperature, failure to complete solderin g within a short time could result in device failure. there - fore, the following items should always be observed i n order to minimize the thermal stress to which the device s are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of th e leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes . gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause exces - sive thermal shock and stress which can result in damag e to the device. sot?563 1.0 0.3 0.45 0.5 0.5 dimensions in mm
bc847bpdxv6t1, bc847bpdxv6t5 http://onsemi.com 7 package dimensions sot?563, 6 lead case 463a?01 issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 h e 0.08 0.12 0.18 0.003 0.005 0.007 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
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